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NVHL070N120M3S - onsemi

Description: Devices are Pb−Free and are RoHS Compliant; 15V to 18V Gate Drive; Typical RDS(on) = 65mΩ at Vgs =18V, Id = 15A; Qualified for Automotive According to AEC−Q101; New M3S technology: 65mohm RDS(ON) with low EON and EOFF losses

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NVHL070N120M3S - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD CASE 340CX ISSUE A
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NVHL070N120M3S - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD CASE 340CX ISSUE A
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NVHL070N120M3S Details

  • Manufacturer Part Number:

    NVHL070N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Package Description:

    TO-247-3L, 3 PIN

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.087 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Pulsed Drain Current-Max (IDM):

    98 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NVHL070N120M3S Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the NVHL070N120M3S is not explicitly stated in the datasheet. However, onsemi provides an SOA curve in the datasheet, which can be used to determine the maximum safe operating conditions. It's recommended to consult with onsemi's application engineers or refer to the device's Spice model for more detailed information.
  • To optimize the gate drive circuit for the NVHL070N120M3S, consider the following: use a low-impedance gate drive source, ensure a fast rise and fall time (typically <10ns), and maintain a voltage swing of 10-15V to fully enhance the device. Additionally, consider using a gate resistor to dampen ringing and overshoot. Consult onsemi's application notes and gate drive circuit examples for more guidance.
  • For optimal thermal management, ensure a low thermal resistance PCB design with a large copper area for heat dissipation. Use a thermal pad or heat sink with a thermal interface material (TIM) to reduce thermal resistance. Keep the device's drain and source pins as close as possible to the PCB's copper plane. Consult onsemi's application notes and PCB layout guidelines for more detailed recommendations.
  • To prevent ESD damage, handle the NVHL070N120M3S with ESD-protective equipment and follow proper handling procedures. Ensure the device is stored in an ESD-protective package, and consider using ESD protection devices (e.g., TVS diodes) in the circuit design. Consult onsemi's ESD protection guidelines and application notes for more information.
  • The NVHL070N120M3S is designed to meet onsemi's reliability standards, which include a minimum of 10 years of operation at a junction temperature of 150°C. However, the actual lifetime depends on various factors, such as operating conditions, thermal management, and quality of the assembly process. Consult onsemi's reliability reports and application notes for more detailed information.

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