NVHL0 Model Download Search Results
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NVHL027N65S3F
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1 | Best in body diode; Internal Rg; Lower RDS (ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ& RDS (ON) max X EOSS; Internal Zener / 640 BS dss | Transistor Outline, Vertical | NVHL027N65S3F |
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NVHL040N60S5F
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1 | Ultra Low Gate Charge (Typ. Qg = 108 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 643 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 32.8 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.6 Ω; AEC Q101 Qualified | Transistor Outline, Vertical | NVHL040N60S5F |
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NVHL025N065SC1
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1 | Qualified for Automotive According to AEC−Q101; 650V rated; Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Transistor Outline, Vertical | NVHL025N065SC1 |
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NVHL045N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 100% UIL Tested; Devices are RoHS Compliant; 650V rated; Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A | Other | NVHL045N065SC1 |
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NVHL070N120M3S
onsemi
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1 | Devices are Pb−Free and are RoHS Compliant; 15V to 18V Gate Drive; Typical RDS(on) = 65mΩ at Vgs =18V, Id = 15A; Qualified for Automotive According to AEC−Q101; New M3S technology: 65mohm RDS(ON) with low EON and EOFF losses | Transistor Outline, Vertical | NVHL070N120M3S |
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NVHL040N65S3F
onsemi
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1 | Lower RDS(on) / Same Packages; Best in Class body diode; Internal Rg; Lower FOM (RDS(ON) max X Qg typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss | Transistor Outline, Vertical | NVHL040N65S3F |
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NVHL080N120SC1
onsemi
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1 | 1200V rated; Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; 100% UIL Tested; Qualified for Automotive According to AEC−Q101; Devices are Pb−Free and are RoHS Compliant | Transistor Outline, Vertical | NVHL080N120SC1 |
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NVHL040N120SC1
onsemi
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1 | Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A; High Speed Switching and Low Capacitance; Qualified for Automotive According to AEC−Q101; Devices are Pb−Free and are RoHS Compliant | Transistor Outline, Vertical | NVHL040N120SC1 |
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NVHL055N60S5F
onsemi
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1 | Ultra Low Gate Charge (Typ. Qg = 108 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 643 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 32.8 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.6 Ω; AEC Q101 Qualified | Transistor Outline, Vertical | NVHL055N60S5F |
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NVHL095N65S3F
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1 | Best in Class body diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS(ON) max. X Qg typ. & RDS(ON) max. X Eoss); Internal Zener / 650V BV dss | Transistor Outline, Vertical | NVHL095N65S3F |
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NVHL020N090SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 900V rated; Max RDS(on) = 28 mΩ at Vgs = 15V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Transistor Outline, Vertical | NVHL020N090SC1 |
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NVHL015N065SC1
onsemi
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1 | Devices are RoHS Compliant; Qualified for Automotive According to AEC−Q101; 650V rated; Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A; 100% UIL Tested | Transistor Outline, Vertical | NVHL015N065SC1 |
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NVHL023N065M3S
onsemi
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1 | New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses; Qualified for Automotive According to AEC−Q101; 15V to 18V Gate Drive; TO-247-3L Package; Devices are Pb−Free and are RoHS Compliant | Transistor Outline, Vertical | NVHL023N065M3S |
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NVHL060N090SC1
onsemi
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1 | N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-3 84mOhm @ 20A, 15V,4.3V @ 5mA,1770 pF @ 450 V,-55°C ~ 175°C (TJ) | Other | NVHL060N090SC1 |
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NVHL025N65S3
onsemi
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1 | Best in Class body diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss | Transistor Outline, Vertical | NVHL025N65S3 |
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NVHL020N120SC1
onsemi
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1 | Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; Qualified for Automotive According to AEC−Q101; Devices are Pb−Free and are RoHS Compliant; 1200V rated | Transistor Outline, Vertical | NVHL020N120SC1 |
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NVHL082N65S3HF
onsemi
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1 | Best in Class body diode; Internal Rg; Lower RDS(ON)/ Same Packages; Lower FOM (RDS(ON) max X QG typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss | Other | NVHL082N65S3HF |
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NVHL080N120SC1A
onsemi
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1 | Power Field-Effect Transistor, 31A I(D), 1200V, 0.11ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | NVHL080N120SC1A |
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NVHL050N65S3HF
onsemi
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1 | Best in Class Body Diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS(ON) max. X Qg typ. & RDS(ON) max. X Eoss); Internal Zener / 650V BV dss | NVHL050N65S3HF |
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NVHL065N65S3F
onsemi
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1 | Power Field-Effect Transistor, 46A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NVHL065N65S3F |
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NVHL040N65S3HF
onsemi
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1 | Power Field-Effect Transistor, 65A I(D), 650V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NVHL040N65S3HF |
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NVHL075N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; Ultra Low Gate Charge (Typ. Qg = 61 nC); High Speed Switching with Low Capacitance (Coss = 107 pF); Zero reverse recovery current of body diode; Kelvin Source configuration; Typ. RDS(on) = 57 mΩ at Vgs = 18V; 100% UIL Tested; RoHS Compliant | NVHL075N065SC1 |
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NVHL072N65S3
onsemi
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1 | Power Field-Effect Transistor, 44A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NVHL072N65S3 |
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NVHL050N65S3F
onsemi
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1 | Power Field-Effect Transistor, 58A I(D), 650V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NVHL050N65S3F |
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NVHL082N65S3F
onsemi
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1 | Power Field-Effect Transistor, 40A I(D), 650V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NVHL082N65S3F |
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![Part Image](["https://componentsearchengine.com/2D/0T/19228534.3.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/NVHL060N090SC1.jpg",null,null])
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