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NVHL060N090SC1 - onsemi

Description: N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-3 84mOhm @ 20A, 15V,4.3V @ 5mA,1770 pF @ 450 V,-55°C ~ 175°C (TJ)

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NVHL060N090SC1 - onsemi PCB footprint - Other - Other - TO−247−3LD CASE 340CX ISSUE A_2025-4
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NVHL060N090SC1 - onsemi  - 3D model - Other - TO−247−3LD CASE 340CX ISSUE A_2025-4
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NVHL060N090SC1 Details

  • Manufacturer Part Number:

    NVHL060N090SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    162 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.084 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    221 W

  • Pulsed Drain Current-Max (IDM):

    184 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

  • Turn-off Time-Max (toff):

    94 ns

  • Turn-on Time-Max (ton):

    106 ns

NVHL060N090SC1 Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use a thermal pad, and have a solid ground plane. A heat sink or thermal interface material can be used to improve thermal management. Consult onsemi's application notes and thermal management guidelines for more information.
  • Choose a gate driver that can provide a high enough gate current and voltage to ensure the MOSFET turns on and off quickly. Consider the driver's output current, voltage, and rise/fall times. onsemi recommends using a gate driver with a output current of at least 1A and a voltage rating of 10V or higher.
  • The maximum allowed voltage ringing on the drain-source pins is typically limited to 20-30% of the MOSFET's rated voltage. Excessive ringing can lead to reduced reliability and lifespan. Use a snubber circuit or a gate driver with built-in voltage clamping to minimize ringing.
  • To ensure SOA compliance, calculate the MOSFET's power dissipation and ensure it stays within the specified limits. Consider factors like voltage, current, and temperature. Use onsemi's SOA curves and application notes to determine the safe operating area for your specific design.
  • Handle the MOSFET by the body or use an ESD wrist strap to prevent damage. Use an ESD-protected workstation and follow onsemi's recommended ESD protection procedures. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD arrays, to protect the MOSFET from electrostatic discharge.

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