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NVHL027N65S3F - onsemi

Description: Best in body diode; Internal Rg; Lower RDS (ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ& RDS (ON) max X EOSS; Internal Zener / 640 BS dss

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NVHL027N65S3F - onsemi - PCB symbol
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PCB Footprints
NVHL027N65S3F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - NVHL027N65S3F-1
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3D Models
NVHL027N65S3F - onsemi - 3D model - Transistor Outline, Vertical - NVHL027N65S3F-1
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NVHL027N65S3F Details

  • Manufacturer Part Number:

    NVHL027N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-01-14

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1610 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0274 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    595 W

  • Pulsed Drain Current-Max (IDM):

    187.5 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVHL027N65S3F Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVHL027N65S3F is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 65V. Additionally, the device should be operated within the recommended operating conditions specified in the datasheet.
  • The recommended gate resistor value for the NVHL027N65S3F is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • To protect the NVHL027N65S3F from ESD, handle the device by the body or use an ESD wrist strap, and ensure that the device is stored in an ESD-protected environment. Additionally, use ESD-protected equipment and follow proper ESD handling procedures during assembly and testing.
  • The maximum allowable power dissipation for the NVHL027N65S3F is 150W, but this value can be affected by the device's operating conditions, such as temperature and voltage. Be sure to check the datasheet for specific power dissipation guidelines.

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NVHL027N65S3F Overview

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