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NVHL040N65S3F - onsemi

Description: Lower RDS(on) / Same Packages; Best in Class body diode; Internal Rg; Lower FOM (RDS(ON) max X Qg typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss

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NVHL040N65S3F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD_1
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NVHL040N65S3F - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD_1
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NVHL040N65S3F Details

  • Manufacturer Part Number:

    NVHL040N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-01-14

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1009 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    446 W

  • Pulsed Drain Current-Max (IDM):

    162.5 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVHL040N65S3F Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the NVHL040N65S3F is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the maximum power dissipation of the device.
  • The recommended gate drive voltage for the NVHL040N65S3F is between 10V and 15V. This ensures proper switching and minimizes power losses. However, the exact gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the NVHL040N65S3F is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is designed to withstand the harsh conditions of automotive and industrial environments.
  • To protect the NVHL040N65S3F from ESD, handle the device with an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. Also, use ESD-protected packaging and storage materials to prevent damage during transportation and storage.

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NVHL040N65S3F Overview

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