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NVHL055N60S5F - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 108 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 643 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 32.8 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.6 Ω; AEC Q101 Qualified

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PCB Footprints
NVHL055N60S5F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3LD CASE 340CH ISSUE A
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3D Models
NVHL055N60S5F - onsemi  - 3D model - Transistor Outline, Vertical - TO-247-3LD CASE 340CH ISSUE A
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NVHL055N60S5F Details

  • Manufacturer Part Number:

    NVHL055N60S5F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    417 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    275 W

  • Pulsed Drain Current-Max (IDM):

    159 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVHL055N60S5F Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing the device on a thermal pad with a minimum size of 10mm x 10mm, and using multiple vias to connect the thermal pad to a solid copper plane on the bottom layer of the PCB. This helps to dissipate heat efficiently and reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it is essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 175°C. Additionally, ensure that the device is properly cooled, and the thermal design is optimized to minimize thermal resistance. It is also recommended to derate the device's power handling capability at high temperatures.
  • The NVHL055N60S5F has an integrated ESD protection diode, but it is still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding straps, and ionizers to minimize the risk of ESD damage.
  • Yes, the NVHL055N60S5F can be used in a parallel configuration to increase current handling, but it is essential to ensure that the devices are properly matched and synchronized to avoid uneven current sharing and potential oscillations. It is recommended to consult with an onsemi application engineer for guidance on parallel configuration and layout.
  • The recommended gate drive requirements for the NVHL055N60S5F include a gate voltage (Vgs) of 10V to 15V, a gate current (Ig) of 1A to 2A, and a gate resistance (Rg) of 10 ohms to 20 ohms. It is also recommended to use a gate driver with a high current capability and a low output impedance to ensure fast switching times and minimal ringing.

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NVHL055N60S5F Overview

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