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NVHL160N120SC1 - onsemi

Description: 1200V rated; High Speed Switching and Low Capacitance; Qualified for Automotive According to AEC−Q101

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NVHL160N120SC1 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3LD
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NVHL160N120SC1 - onsemi  - 3D model - Transistor Outline, Vertical - TO-247-3LD
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NVHL160N120SC1 Details

  • Manufacturer Part Number:

    NVHL160N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3LD

  • Manufacturer Package Code:

    340CX

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    128 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.224 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    119 W

  • Pulsed Drain Current-Max (IDM):

    69 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NVHL160N120SC1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NVHL160N120SC1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, and the TIM should have a thermal conductivity of at least 5 W/m-K.
  • The recommended gate drive voltage for the NVHL160N120SC1 is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the NVHL160N120SC1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the NVHL160N120SC1 is 10 kV/μs. This rating ensures that the device can withstand high voltage transients and minimize the risk of voltage-induced failures.

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NVHL160N120SC1 Overview

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