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NVMFD024N06CT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFWD024N06C − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

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NVMFD024N06CT1G - onsemi PCB footprint - Other - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT
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NVMFD024N06CT1G - onsemi  - 3D model - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT
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NVMFD024N06CT1G Details

  • Manufacturer Part Number:

    NVMFD024N06CT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN8, 8 PIN

  • Manufacturer Package Code:

    506BT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    14 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.0226 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.05 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    85 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD024N06CT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for NVMFD024N06CT1G is -55°C to 150°C.
  • To ensure proper biasing during startup, make sure to apply a voltage to the gate pin (Vgs) before applying a voltage to the drain pin (Vds). This will help prevent unwanted turn-on or oscillation.
  • For optimal performance, it is recommended to use a PCB layout that minimizes parasitic inductance and capacitance. This can be achieved by using a compact layout, keeping the drain and source pins close together, and using a solid ground plane.
  • Yes, the NVMFD024N06CT1G is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's requirements are within the device's capabilities.
  • To handle ESD protection, it is recommended to use a combination of ESD protection devices, such as TVS diodes or ESD arrays, and follow proper PCB design and layout practices to minimize the risk of ESD damage.

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