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NVMFD5C446NLWFT1G - onsemi

Description: Small Footprint (5x6 mm); Low rDS(on); Low QG and Capacitance; NVMFD5C446NLWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFD5C446NLWFT1G - onsemi PCB footprint - Other - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE E
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NVMFD5C446NLWFT1G - onsemi  - 3D model - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE E
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NVMFD5C446NLWFT1G Details

  • Manufacturer Part Number:

    NVMFD5C446NLWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    48 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    644 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C446NLWFT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NVMFD5C446NLWFT1G is a WLCSP (Wafer Level Chip Scale Package) with a 3.5x3.5mm body size and 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • The power-up sequence for NVMFD5C446NLWFT1G is critical. It is recommended to power up VCCQ before VCC, and to ensure that VCCQ is stable before accessing the device. A power-up sequence diagram is provided in the datasheet.
  • The maximum operating frequency for NVMFD5C446NLWFT1G is 1666 MT/s, but it can be overclocked to 1866 MT/s with reduced voltage and temperature. However, this may affect the device's reliability and is not recommended for production use.
  • Thermal management is crucial for NVMFD5C446NLWFT1G. It is recommended to use a thermal pad on the PCB, and to ensure good airflow around the device. The datasheet provides thermal resistance and junction-to-case thermal resistance values to aid in thermal design.
  • The recommended operating temperature range for NVMFD5C446NLWFT1G is -40°C to 105°C. However, the device can operate up to 125°C with reduced performance and reliability.

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