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NVMFD5C462NLWFT1G - onsemi

Description: RoHS Compliant; Small Footprint (5x6 mm); Low RDS(on) to Minimize Conduction Losses; Low QG and Capacitance; NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical Inspection; AEC−Q101 Qualified and PPAP Capable

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NVMFD5C462NLWFT1G - onsemi PCB footprint - Other - Other - DFN8 5x6 (SO8FL) CASE 506BT
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NVMFD5C462NLWFT1G - onsemi  - 3D model - Other - DFN8 5x6 (SO8FL) CASE 506BT
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NVMFD5C462NLWFT1G Details

  • Manufacturer Part Number:

    NVMFD5C462NLWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    174 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain-source On Resistance-Max:

    0.0077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    311 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C462NLWFT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the exposed pad to the ground plane. This helps to dissipate heat efficiently.
  • To ensure reliable operation across the full temperature range, it's essential to follow the recommended operating conditions, including voltage and current ratings. Additionally, consider using thermal management techniques, such as heat sinks or thermal interfaces, to maintain a safe junction temperature.
  • The 'L' suffix in the part number indicates that the device is lead-free and RoHS-compliant. This means that the device is manufactured using environmentally friendly materials and processes.
  • While the NVMFD5C462NLWFT1G is a high-quality device, it may not meet the specific requirements for high-reliability or aerospace applications. It's essential to review the device's qualifications and certifications to ensure it meets the necessary standards for your specific application.
  • The NVMFD5C462NLWFT1G has built-in ESD protection and latch-up prevention measures, including diodes and resistors, to protect the device from electrostatic discharge and latch-up events. However, it's still essential to follow proper handling and assembly procedures to prevent damage.

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NVMFD5C462NLWFT1G Overview

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