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NVMFD5C466NLWFT1G - onsemi

Description: Small Footprint (5x6 mm); Low rDS(on); Low QG and Capacitance; NVMFD5C466NLWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFD5C466NLWFT1G - onsemi PCB footprint - Other - Other - NVMFD6H840NLT1G-2
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NVMFD5C466NLWFT1G - onsemi  - 3D model - Other - NVMFD6H840NLT1G-2
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NVMFD5C466NLWFT1G Details

  • Manufacturer Part Number:

    NVMFD5C466NLWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO8FL, DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0126 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    198 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C466NLWFT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad of the NVMFD5C466NLWFT1G to the ground plane. This helps to dissipate heat efficiently.
  • To ensure reliable data retention in extreme temperature conditions, it is recommended to follow the recommended operating conditions and storage guidelines outlined in the datasheet. Additionally, using error correction codes and implementing data redundancy can help to mitigate data loss due to temperature-related errors.
  • The recommended power-up sequence for the NVMFD5C466NLWFT1G is to apply VCC first, followed by VPP, and then the clock signal. This ensures that the device is properly initialized and configured before operation.
  • To handle page erase and programming errors, it is recommended to implement error detection and correction mechanisms, such as checksums and ECC. Additionally, using a retry mechanism to re-program or re-erase the affected page can help to recover from errors.
  • To secure the device against unauthorized access, it is recommended to use secure protocols for data transmission and storage, such as encryption and secure boot mechanisms. Additionally, implementing access controls and secure key management practices can help to prevent unauthorized access to the device.

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NVMFD5C466NLWFT1G Overview

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