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NVMFD5C466NWFT1G - onsemi

Description: MOSFET – Power, Dual N-Channel, Low on resistance; High current capability; 100% avalanche tested; AEC−Q101 Qualified and PPAP Capable; NVMFD5C466NWF − Wettable Flank Option; RoHS Compliant

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PCB Footprints
NVMFD5C466NWFT1G - onsemi PCB footprint - Other - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE F_2023AD
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3D Models
NVMFD5C466NWFT1G - onsemi  - 3D model - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE F_2023AD
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NVMFD5C466NWFT1G Details

  • Manufacturer Part Number:

    NVMFD5C466NWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-10-25

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.0081 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    169 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C466NWFT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the package and to connect it to a thermal plane or a heat sink.
  • The power-up sequence for the NVMFD5C466NWFT1G is critical. It's recommended to power up the VCCQ pin first, followed by the VCC pin, and then the input signals. The power-down sequence should be reversed. Additionally, it's essential to ensure that the input signals are stable before applying power to the VCC pin.
  • For high-reliability or automotive applications, it's essential to consider the device's operating temperature range, voltage tolerance, and radiation hardness. The NVMFD5C466NWFT1G is AEC-Q100 qualified, but additional testing and validation may be required. It's also recommended to follow the onsemi's guidelines for high-reliability design and manufacturing.
  • To implement a reliable and efficient write operation, it's recommended to use the device's internal write buffer, which allows for faster write operations. Additionally, it's essential to follow the recommended write timing and voltage conditions, and to use error detection and correction mechanisms to ensure data integrity.
  • When using the NVMFD5C466NWFT1G in a system with high EMI, it's essential to consider the device's electromagnetic susceptibility and emission. It's recommended to use proper shielding, filtering, and grounding techniques to minimize the impact of EMI on the device's operation. Additionally, it's essential to follow the onsemi's guidelines for EMI design and testing.

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Part Image NVMFD5C466NT1G onsemi

Power Field-Effect Transistor, 14A I(D), 40V, 0.0081ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET