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NVMFD5C470NT1G - onsemi

Description: Low on resistance; High current capability; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFD5C470NT1G Details

  • Manufacturer Part Number:

    NVMFD5C470NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2017-10-25

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    49 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    11.7 A

  • Drain-source On Resistance-Max:

    0.0117 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    108 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFD5C470NT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing thermal vias under the package, using a solid ground plane, and keeping the thermal traces as short and wide as possible. A 4-layer PCB with a dedicated thermal layer is also recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider using a heat sink or a thermally enhanced package.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced reliability, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain its performance and lifespan.
  • To handle ESD protection during handling and assembly, follow proper ESD handling procedures, use ESD-safe materials and tools, and ensure that the device is properly grounded during assembly. Additionally, consider using ESD protection devices or circuits in the design.
  • The recommended storage and handling conditions for the device include storing it in a dry, cool place, away from direct sunlight and moisture. The device should be handled in an ESD-safe environment, and it's recommended to follow the manufacturer's specific storage and handling guidelines.

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NVMFD5C470NT1G Overview

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