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NVMFD5C650NLT1G - onsemi

Description: Small Footprint (5x6 mm); Low rDS(on); Low QG and Capacitance to Minimize Driver Losses; NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFD5C650NLT1G - onsemi - PCB symbol
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PCB Footprints
NVMFD5C650NLT1G - onsemi PCB footprint - Other - Other - DFN8 5x6, 1.27P
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3D Models
NVMFD5C650NLT1G - onsemi - 3D model - Other - DFN8 5x6, 1.27P
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NVMFD5C650NLT1G Details

  • Manufacturer Part Number:

    NVMFD5C650NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    186 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    502 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C650NLT1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2oz copper thickness and a thermal via array under the package is recommended.
  • Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • Exceeding the maximum junction temperature can lead to reduced device lifespan, increased leakage current, and potentially even device failure. It is essential to ensure that the device operates within the recommended temperature range to ensure reliable operation.
  • The NVMFD5C650NLT1G has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • When operating multiple devices in parallel, ensure that each device has its own decoupling capacitor and that the PCB is designed to minimize inductive coupling between devices. Also, consider using a common voltage regulator and decoupling capacitors to minimize voltage droop.

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NVMFD5C650NLT1G Overview

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