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NVMFD5C672NLT1G - onsemi

Description: Mosfet Array 60V 12A (Ta), 49A (Tc) 3.1W (Ta), 45W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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NVMFD5C672NLT1G Details

  • Manufacturer Part Number:

    NVMFD5C672NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-08-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    66 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain-source On Resistance-Max:

    0.0168 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    146 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C672NLT1G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2oz copper thickness and a thermal via array under the package is recommended.
  • Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer.
  • Use a shielded enclosure and ensure that the PCB is designed with EMI and RFI shielding in mind. Use a common mode choke and ferrite beads to filter out high-frequency noise.
  • Ensure that the power supplies are sequenced correctly, and that the voltage ramp-up is controlled to prevent damage to the device. A soft-start circuit can be used to control the voltage ramp-up.
  • The device is moisture-sensitive, so it's essential to handle it in a dry environment and follow the recommended storage and handling procedures to prevent damage.

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