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NVMFD5C680NLT1G - onsemi

Description: Small Footprint (5x6 mm); Low rDS(on); Low QG and Capacitance; NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFD5C680NLT1G - onsemi PCB footprint - Other - Other - DFN8 5x6 (SO8FL) CASE 506BT
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NVMFD5C680NLT1G - onsemi  - 3D model - Other - DFN8 5x6 (SO8FL) CASE 506BT
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NVMFD5C680NLT1G Details

  • Manufacturer Part Number:

    NVMFD5C680NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN8, 6 PIN

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    47 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    19 W

  • Pulsed Drain Current-Max (IDM):

    57 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C680NLT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to ensure efficient heat dissipation.
  • Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using thermal management techniques such as heat sinks or thermal interfaces.
  • Exceeding the maximum junction temperature can lead to reduced device lifespan, increased leakage current, and potentially even device failure. It is essential to ensure that the device operates within the recommended temperature range to maintain reliability.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input/output lines to protect the device from electrostatic discharge. Follow proper PCB design and handling practices to minimize ESD risks.
  • When operating multiple devices in parallel, ensure that each device has its own decoupling capacitor and that the PCB is designed to minimize inductive coupling between devices. Also, consider using a common voltage regulator and decoupling capacitors to reduce noise and ensure stable operation.

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