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NVMFD5C680NLWFT1G - onsemi

Description: Small Footprint (5x6 mm); Low rDS(on); Low QG and Capacitance; NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFD5C680NLWFT1G - onsemi PCB footprint - Other - Other - DFN8 5x6,1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE E
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NVMFD5C680NLWFT1G - onsemi  - 3D model - Other - DFN8 5x6,1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE E
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NVMFD5C680NLWFT1G Details

  • Manufacturer Part Number:

    NVMFD5C680NLWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN8, 6 PIN

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    47 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    19 W

  • Pulsed Drain Current-Max (IDM):

    57 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD5C680NLWFT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NVMFD5C680NLWFT1G is a WLCC-68 package with a 6.8mm x 6.8mm body size and 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • The NVMFD5C680NLWFT1G requires a specific power-up and power-down sequencing to ensure proper operation. The recommended sequence is to power up VCC first, followed by VPP, and then the input signals. During power-down, the input signals should be disabled before powering down VPP and then VCC.
  • The maximum operating frequency for NVMFD5C680NLWFT1G is 166 MHz. However, the actual operating frequency may be limited by the system design and the specific application.
  • To implement a reliable write operation for NVMFD5C680NLWFT1G, ensure that the write cycle is within the specified timing parameters, and the device is properly powered and initialized. Also, follow the recommended write sequence and pulse width to avoid data corruption or device damage.
  • The recommended storage temperature range for NVMFD5C680NLWFT1G is -40°C to 125°C. Storing the device outside this range may affect its reliability and performance.

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NVMFD5C680NLWFT1G Overview

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Part Image NVMFD5C680NLT1G onsemi

Power Field-Effect Transistor, 7.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET