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NVMFD6H840NLWFT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFD6H840NLWFT1G − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFD6H840NLWFT1G - onsemi PCB footprint - Other - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE E-1
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NVMFD6H840NLWFT1G - onsemi  - 3D model - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE E-1
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NVMFD6H840NLWFT1G Details

  • Manufacturer Part Number:

    NVMFD6H840NLWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN8, 8 PIN

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    297 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    336 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD6H840NLWFT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom side of the board. Additionally, keeping the PCB traces away from the device's thermal pad and using a heat sink can further improve thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a heat sink, and implement thermal management techniques such as airflow or convection cooling. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially cause permanent damage to the device. It's crucial to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • To handle ESD protection during handling and assembly, use an ESD wrist strap or mat, handle the device by the body or pins, avoid touching the die, and use ESD-protected packaging and storage materials. Additionally, follow proper assembly procedures, such as using an ESD-protected workstation and ensuring that all equipment is properly grounded.
  • The recommended storage and handling conditions for the device include storing it in a dry, cool place (less than 30°C and 60% relative humidity), avoiding exposure to direct sunlight, and handling the device in an ESD-protected environment. It's also essential to follow proper packaging and shipping procedures to prevent mechanical damage.

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