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NVMFD6H846NLT1G - onsemi

Description: Small Footprint (5x6mm); Low RDS (on); Low QG and Capacitance; NVMFD6H846NLWF; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMFD6H846NLT1G Details

  • Manufacturer Part Number:

    NVMFD6H846NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Package Description:

    SO-8FL, DFN8, 6 PIN

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2020-03-02

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    201 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34 W

  • Pulsed Drain Current-Max (IDM):

    114 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD6H846NLT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to ensure good heat dissipation.
  • Ensure that the device is operated within the recommended voltage and current ranges, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • Exceeding the maximum Tj rating can lead to reduced device lifespan, increased leakage current, and potentially even device failure. It is essential to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect the device from electrostatic discharge. Also, ensure that the PCB is designed with ESD protection in mind, including the use of ESD-safe handling and storage procedures.
  • When paralleling multiple devices, ensure that each device has its own decoupling capacitor and that the PCB is designed to minimize inductive coupling between devices. Also, consider using a common gate driver or controller to ensure synchronized switching and minimize current imbalance.

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