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NVMFD6H852NLT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFD6H852NLWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVMFD6H852NLT1G - onsemi PCB footprint - Other - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE F_2023AD
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3D Models
NVMFD6H852NLT1G - onsemi  - 3D model - Other - DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE F_2023AD
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NVMFD6H852NLT1G Details

  • Manufacturer Part Number:

    NVMFD6H852NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL Dual / DFN-8

  • Manufacturer Package Code:

    506BT

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    86 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.0315 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    98 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFD6H852NLT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
  • Exceeding the maximum Tj rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure that the device is operated within the recommended temperature range to maintain reliability.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect against electrostatic discharge. Follow proper PCB layout and handling procedures to minimize ESD risks.
  • When paralleling devices, ensure that each device has its own current sense resistor and that the devices are matched for optimal performance. Also, consider the impact of paralleling on the overall system's thermal design and power distribution.

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NVMFD6H852NLT1G Overview

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