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NVMFS005N10MCLT1G - onsemi

Description: Small Footprint (5x6mm); Low RDS(on); Low QG and Capacitance; AEC-Q101 Qualified and PPAP Capablwe; RoHS Compliant

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NVMFS005N10MCLT1G Details

  • Manufacturer Part Number:

    NVMFS005N10MCLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2020-11-04

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    365 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    108 A

  • Drain-source On Resistance-Max:

    0.0051 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    131 W

  • Pulsed Drain Current-Max (IDM):

    695 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS005N10MCLT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS005N10MCLT1G is 2.7V to 3.6V.
  • To ensure data retention in NVMFS005N10MCLT1G, it is recommended to follow the recommended storage conditions, avoid exposure to extreme temperatures, and use a voltage regulator to maintain a stable power supply.
  • The maximum number of erase cycles for NVMFS005N10MCLT1G is 100,000 cycles.
  • Page and block management in NVMFS005N10MCLT1G can be handled using the device's built-in wear leveling and bad block management features, as well as implementing a flash translation layer (FTL) in the system software.
  • The typical programming time for NVMFS005N10MCLT1G is 2-3ms per page.

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NVMFS005N10MCLT1G Overview

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