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NVMFS2D3P04M8LT1G - onsemi

Description: P-Channel 40 V 31A (Ta), 222A (Tc) 3.8W (Ta), 205W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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NVMFS2D3P04M8LT1G Details

  • Manufacturer Part Number:

    NVMFS2D3P04M8LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN5 5x6, 1.27P (SO−8FL)

  • Manufacturer Package Code:

    506EZ

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    185 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS2D3P04M8LT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS2D3P04M8LT1G is 2.7V to 3.6V.
  • To ensure data retention in NVMFS2D3P04M8LT1G, it is recommended to follow the recommended storage conditions, avoid exposure to extreme temperatures, and use a voltage regulator to maintain a stable power supply.
  • The maximum number of erase cycles for NVMFS2D3P04M8LT1G is 100,000 cycles.
  • Page and block management in NVMFS2D3P04M8LT1G can be handled using the device's built-in wear leveling and bad block management features, as well as implementing a flash translation layer (FTL) in the system software.
  • The typical programming time for NVMFS2D3P04M8LT1G is 2-3ms per page.

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NVMFS2D3P04M8LT1G Overview

Use the download button to access the NVMFS2D3P04M8LT1G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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