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NVMFS4C01NWFT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFS4C01NWF − Wettable Flanks Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS4C01NWFT1G - onsemi PCB footprint - Other - Other - NVMFS4C01NWFT1G-1
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NVMFS4C01NWFT1G Details

  • Manufacturer Part Number:

    NVMFS4C01NWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Package Description:

    DFNW5, 6 PIN

  • Manufacturer Package Code:

    507BE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    862 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    319 A

  • Drain-source On Resistance-Max:

    0.00095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.84 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS4C01NWFT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS4C01NWFT1G is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, typically from -55°C to 150°C.
  • To ensure data integrity and prevent data corruption during power cycling, it's crucial to follow the recommended power-up and power-down sequences outlined in the datasheet. Additionally, implement a robust power management scheme, and consider using a voltage supervisor or reset controller to monitor the power supply and ensure a clean reset.
  • The NVMFS4C01NWFT1G supports up to 100,000 erase cycles per sector, with a minimum of 10,000 erase cycles guaranteed. However, the actual number of erase cycles may vary depending on the usage pattern, operating conditions, and other factors.
  • The NVMFS4C01NWFT1G has built-in wear leveling and bad block management mechanisms. However, it's still essential to implement a wear leveling algorithm in your firmware to ensure even wear across the Flash memory. Additionally, consider using error correction codes (ECC) and checksums to detect and correct data errors.
  • The typical programming time for the NVMFS4C01NWFT1G is around 3-5 milliseconds (ms) per 256-byte page, depending on the operating frequency and voltage. However, this time may vary depending on the specific use case and system configuration.

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NVMFS4C01NWFT1G Overview

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