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NVMFS4C05NT1G - onsemi

Description: Low Capacitance; Optimized Gate Charge; RoHS Compliant; NVMFS4C05NWF − Wettable Flanks Option; AEC−Q101 Qualified and PPAP Capable; Low On-Resistance

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NVMFS4C05NT1G - onsemi - PCB symbol
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PCB Footprints
NVMFS4C05NT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M
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3D Models
NVMFS4C05NT1G - onsemi - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M
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NVMFS4C05NT1G Details

  • Manufacturer Part Number:

    NVMFS4C05NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    116 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    175 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Time@Peak Reflow Temperature-Max (s):

    30

NVMFS4C05NT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS4C05NT1G is 2.7V to 3.6V.
  • To ensure data integrity, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The NVMFS4C05NT1G supports up to 100,000 erase cycles.
  • Page erase and program operations should be performed using the recommended algorithms and timing specifications outlined in the datasheet to ensure reliable operation.
  • The recommended storage temperature range for NVMFS4C05NT1G is -40°C to 125°C.

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NVMFS4C05NT1G Overview

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Power Field-Effect Transistor, 116A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET