Part Image

NVMFS4C302NT1G - onsemi

Description: NVMFS4C302NWF − Wettable Flanks Option; AEC−Q101 Qualified and PPAP Capable; Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; RoHS Compliant

Download NVMFS4C302NT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVMFS4C302NT1G - onsemi PCB footprint - Other - Other - DFN5 5x 6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2022-2
click to zoom
3D Models
NVMFS4C302NT1G - onsemi  - 3D model - Other - DFN5 5x 6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2022-2
click to zoom

NVMFS4C302NT1G Details

  • Manufacturer Part Number:

    NVMFS4C302NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    186 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    43 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS4C302NT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS4C302NT1G is 2.7V to 3.6V.
  • To ensure data retention in NVMFS4C302NT1G, it is recommended to follow the recommended storage conditions, avoid exposure to extreme temperatures, and use a voltage regulator to maintain a stable power supply.
  • The maximum number of erase cycles for NVMFS4C302NT1G is 100,000 cycles.
  • Yes, NVMFS4C302NT1G is rated for operation up to 125°C, but it's recommended to follow the recommended operating temperature range of -40°C to 85°C for optimal performance and reliability.
  • NVMFS4C302NT1G can be interfaced with a microcontroller using the SPI or QSPI protocol. The specific interface requirements will depend on the microcontroller and the application.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVMFS4C302NT1G Overview

Use the download button to access the NVMFS4C302NT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMFS4C302NT1G

Showing 0 results