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NVMFS5830NLT1G - onsemi

Description: Obsolete - Power MOSFET 40V, 185A, 2.3 mOhm, Single N-Channel, SO8-FL, Logic Level.

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NVMFS5830NLT1G - onsemi - PCB symbol
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PCB Footprints
NVMFS5830NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H
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3D Models
NVMFS5830NLT1G - onsemi - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H
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NVMFS5830NLT1G Details

  • Manufacturer Part Number:

    NVMFS5830NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DFN5 5X6, 1.27P (SO 8FL)

  • Package Description:

    SO-8FL, DFN5,8 PIN

  • Pin Count:

    5

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    361 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    185 A

  • Drain-source On Resistance-Max:

    0.0036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    500 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    158 W

  • Pulsed Drain Current-Max (IDM):

    1012 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS5830NLT1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal resistance. Also, consider using thermal protection devices or thermal sensors to monitor temperature.
  • Operating at a lower voltage may reduce power consumption but may also affect performance and reliability. Operating at a higher voltage may improve performance but increases power consumption and reduces reliability. Always operate within the recommended voltage range.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input/output lines to protect the device from electrostatic discharge. Follow proper PCB design and handling practices to minimize ESD risks.
  • Implement redundant systems, error correction, and fault detection mechanisms to ensure reliability. Follow safety standards and guidelines such as IEC 61508 or ISO 26262, and consult with onsemi's application notes and technical support for guidance.

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NVMFS5830NLT1G Overview

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