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NVMFS5A140PLZWFT1G - onsemi

Description: Obsolete - Single P-Channel Power MOSFET, -40 V, -140 A, 4.2 mΩ

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NVMFS5A140PLZWFT1G - onsemi PCB footprint - Other - Other - NVMFS6H864NT1G-2
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NVMFS5A140PLZWFT1G - onsemi  - 3D model - Other - NVMFS6H864NT1G-2
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NVMFS5A140PLZWFT1G Details

  • Manufacturer Part Number:

    NVMFS5A140PLZWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2017-02-15

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    140 A

  • Drain-source On Resistance-Max:

    7.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    3.8 W

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    560 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5A140PLZWFT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS5A140PLZWFT1G is 2.7V to 3.6V.
  • To ensure data integrity, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The NVMFS5A140PLZWFT1G supports up to 100,000 erase cycles.
  • In case of a page erase error, it is recommended to retry the erase operation up to 3 times. If the error persists, the device should be replaced.
  • It is recommended to use a wear-leveling algorithm to distribute write cycles evenly across the memory to ensure maximum endurance.

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NVMFS5A140PLZWFT1G Overview

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Power Field-Effect Transistor, 140A I(D), 40V, 7.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5A140PLZ onsemi

Power Field-Effect Transistor, 140A I(D), 40V, 7.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET