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NVMFS5C404NWFAFT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS5C404NWFAFT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A
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NVMFS5C404NWFAFT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A
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NVMFS5C404NWFAFT1G Details

  • Manufacturer Part Number:

    NVMFS5C404NWFAFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Manufacturer Package Code:

    507BE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-02-23

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    907 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    378 A

  • Drain-source On Resistance-Max:

    0.0007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C404NWFAFT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C404NWFAFT1G is -40°C to 125°C.
  • To ensure data integrity and prevent data corruption during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The NVMFS5C404NWFAFT1G supports up to 100,000 erase cycles.
  • The NVMFS5C404NWFAFT1G uses a page-based architecture, where each page is 528 bytes. The device is divided into blocks, each consisting of 64 pages. The user needs to manage page and block allocation, wear leveling, and garbage collection to ensure optimal performance and endurance.
  • The typical programming time for NVMFS5C404NWFAFT1G is 2-3 ms per page.

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NVMFS5C404NWFAFT1G Overview

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For a full list of alternate parts for NVMFS5C404NWFAFT1G, check out Findchips.com