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NVMFS5C404NWFET1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS5C404NWFET1G - onsemi PCB footprint - Other - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFS5C404NWFET1G - onsemi  - 3D model - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFS5C404NWFET1G Details

  • Manufacturer Part Number:

    NVMFS5C404NWFET1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFNW5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    907 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    378 A

  • Drain-source On Resistance-Max:

    0.0007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS5C404NWFET1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper thickness, and ensuring a solid copper fill under the device. Additionally, it's recommended to use vias to connect the thermal pad to an internal copper plane or the backside of the PCB to dissipate heat efficiently.
  • To ensure the device is properly biased during startup, it's recommended to use a soft-start circuit to slowly ramp up the gate voltage to the recommended operating point. This helps prevent inrush currents and ensures the device is biased correctly.
  • The recommended gate drive circuits for this device involve using a dedicated gate driver IC or a discrete circuit with a low impedance output stage to ensure fast switching times and minimal ringing. The gate drive circuit should be capable of sourcing and sinking high peak currents to charge and discharge the gate capacitance quickly.
  • To handle the high di/dt and dv/dt ratings of this device, it's recommended to use a snubber circuit or a clamp circuit to limit the voltage and current transients during switching. Additionally, using a layout with minimal parasitic inductance and capacitance can help reduce the stress on the device.
  • The thermal management considerations for this device involve ensuring good thermal conduction from the device to the heat sink or PCB, using thermal interface materials with high thermal conductivity, and providing adequate airflow or heat sink design to dissipate heat efficiently.

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