Part Image

NVMFS5C410NLWFAFT1G - onsemi

Description: RoHS Compliant; AEC−Q101 Qualified and PPAP Capable; NVMFS5C410NLWF − Wettable Flank Option; Low QG and Capacitance; Low RDS(on); Small Footprint (5x6 mm)

Download NVMFS5C410NLWFAFT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVMFS5C410NLWFAFT1G - onsemi PCB footprint - Other - Other - NVMFS5C406NLT1G-3
click to zoom
3D Models
NVMFS5C410NLWFAFT1G - onsemi  - 3D model - Other - NVMFS5C406NLT1G-3
click to zoom

NVMFS5C410NLWFAFT1G Details

  • Manufacturer Part Number:

    NVMFS5C410NLWFAFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Manufacturer Package Code:

    507BE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2017-02-23

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    706 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    330 A

  • Drain-source On Resistance-Max:

    0.0012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    116 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C410NLWFAFT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C410NLWFAFT1G is -40°C to 125°C.
  • To ensure data integrity and prevent data corruption during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The NVMFS5C410NLWFAFT1G supports up to 100,000 erase cycles.
  • The NVMFS5C410NLWFAFT1G uses a page-based architecture, where each page is 528 bytes. The device has 2048 pages per block, and 128 blocks per device. The user needs to manage page and block allocation, wear leveling, and garbage collection to ensure optimal performance and endurance.
  • The typical programming time for NVMFS5C410NLWFAFT1G is 3-5 ms per page.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVMFS5C410NLWFAFT1G Overview

Use the download button to access the NVMFS5C410NLWFAFT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMFS5C410NLWFAFT1G

Showing 0 results

NVMFS5C410NLWFAFT1G Alternates

Showing results

Image Part Number Model
Part Image NVMFS5C410NLAFT1G onsemi

Power Field-Effect Transistor, 330A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C410NLWFT3G onsemi

Power Field-Effect Transistor, 330A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C410NWFT1G onsemi

Power Field-Effect Transistor, 300A I(D), 40V, 0.00092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C410NWFT3G onsemi

Power Field-Effect Transistor, 300A I(D), 40V, 0.00092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C410NT3G onsemi

Power Field-Effect Transistor, 300A I(D), 40V, 0.00092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for NVMFS5C410NLWFAFT1G, check out Findchips.com