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NVMFS5C420NLT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFS5C420NLWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

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NVMFS5C420NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2024
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NVMFS5C420NLT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_2024
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NVMFS5C420NLT1G Details

  • Manufacturer Part Number:

    NVMFS5C420NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1541 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    277 A

  • Drain-source On Resistance-Max:

    0.0014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    146 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS5C420NLT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS5C420NLT1G is 2.7V to 3.6V.
  • To ensure data integrity during power-down or power-up sequences, it is recommended to follow the power-down and power-up sequencing guidelines provided in the datasheet, and to use a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized.
  • The NVMFS5C420NLT1G supports up to 100,000 erase cycles per sector, and up to 10,000 erase cycles per block.
  • Page and block locking can be handled using the device's built-in locking mechanisms, which allow specific pages or blocks to be locked to prevent accidental erasure or modification. The locking mechanisms can be controlled using specific commands and registers.
  • The recommended method for detecting and correcting errors in NVMFS5C420NLT1G is to use error-correcting codes such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check) to detect and correct errors during data transfer and storage.

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