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NVMFS5C420NWFT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFS5C420NWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb-Free and are RoHS Compliant

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NVMFS5C420NWFT1G - onsemi PCB footprint - Other - Other - NVMFS5C420NWFT1G-2
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NVMFS5C420NWFT1G Details

  • Manufacturer Part Number:

    NVMFS5C420NWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Manufacturer Package Code:

    507BE

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2020-09-28

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    1541 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    268 A

  • Drain-source On Resistance-Max:

    0.0011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    140 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C420NWFT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for optimal performance can be found in the onsemi application note AND9004/D, which provides guidelines for PCB design, thermal management, and layout considerations.
  • The NVMFS5C420NWFT1G has built-in OTP and UVLO features. For OTP, the device will automatically shut down when the junction temperature exceeds 150°C. For UVLO, the device will reset when the input voltage falls below 2.5V. No external implementation is required.
  • The maximum allowed voltage on the VCC pin during power-up and power-down sequences is 6.5V. Exceeding this voltage may cause damage to the device.
  • The NVMFS5C420NWFT1G has built-in power-down and brownout detection circuitry that ensures data integrity. However, it is recommended to implement external power-down and brownout detection circuitry to ensure data integrity in critical applications.
  • The recommended operating frequency range for the NVMFS5C420NWFT1G is 10 kHz to 100 kHz. Operating the device outside this range may affect its performance and reliability.

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NVMFS5C420NWFT1G Overview

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Power Field-Effect Transistor, 268A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET