Part Image

NVMFS5C423NLWFAFT1G - onsemi

Description: RoHS Compliant; AEC−Q101 Qualified and PPAP Capable; NVMFS5C423NLWF − Wettable Flank Option; Low QG and Capacitance; Low RDS(on); Small Footprint (5x6 mm)

Download NVMFS5C423NLWFAFT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVMFS5C423NLWFAFT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P  (SO−8FL) CASE 488AA ISSUE N
click to zoom
3D Models
NVMFS5C423NLWFAFT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P  (SO−8FL) CASE 488AA ISSUE N
click to zoom

NVMFS5C423NLWFAFT1G Details

  • Manufacturer Part Number:

    NVMFS5C423NLWFAFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    507BE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-04-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    150 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C423NLWFAFT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the exposed pad to the ground plane. This helps to dissipate heat efficiently.
  • To ensure reliable operation across the full temperature range, it's essential to follow the recommended operating conditions, including voltage, current, and power dissipation. Additionally, consider using thermal management techniques, such as heat sinks or thermal interfaces, to maintain a safe junction temperature.
  • Exceeding the maximum junction temperature can lead to reduced reliability, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the recommended temperature range to maintain its performance and lifespan.
  • To handle ESD protection, follow proper handling and storage procedures, such as using anti-static bags or wrist straps. During PCB design, consider adding ESD protection diodes or resistors to sensitive pins, and ensure that the PCB layout is designed to minimize ESD susceptibility.
  • For high-frequency operation, consider the device's parasitic capacitance, inductance, and resistance. Use a PCB layout that minimizes signal paths and uses controlled impedance traces. Additionally, ensure that the device is properly decoupled, and consider using a common-mode filter or ferrite beads to reduce high-frequency noise.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVMFS5C423NLWFAFT1G Overview

Use the download button to access the NVMFS5C423NLWFAFT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMFS5C423NLWFAFT1G

Showing 0 results

NVMFS5C423NLWFAFT1G Alternates

Showing results

Image Part Number Model
Part Image NVMFS5C423NLT1G onsemi

Power Field-Effect Transistor, 150A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C423NLWFT1G onsemi

Power Field-Effect Transistor, 150A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET