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NVMFS5C442NLAFT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); AEC−Q101 Qualified and PPAP Capable; NVMFS5C442NLWF − Wettable Flank Option; Low QG and Capacitance; RoHS Compliant

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NVMFS5C442NLAFT1G Details

  • Manufacturer Part Number:

    NVMFS5C442NLAFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2017-04-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    265 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    130 A

  • Drain-source On Resistance-Max:

    0.0037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    37 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C442NLAFT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS5C442NLAFT1G is 2.7V to 3.6V.
  • To ensure data integrity during power-down or power-up sequences, it is recommended to follow the power-down and power-up sequence guidelines provided in the datasheet, and to use a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized.
  • The NVMFS5C442NLAFT1G supports up to 100,000 erase cycles.
  • Page erase and program operations in NVMFS5C442NLAFT1G should be handled using the device's command set, which includes commands for page erase, program, and read operations. The device's datasheet provides detailed information on the command set and the protocol for executing these operations.
  • The typical programming time for NVMFS5C442NLAFT1G is around 2-3 ms per page, depending on the operating voltage and temperature.

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NVMFS5C442NLAFT1G Overview

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For a full list of alternate parts for NVMFS5C442NLAFT1G, check out Findchips.com