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NVMFS5C456NWFT1G - onsemi

Description: Small Footprint (5 x 6 mm); Low RDS(on); Low Qg and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVMFS5C456NWFT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M
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NVMFS5C456NWFT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M
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NVMFS5C456NWFT1G Details

  • Manufacturer Part Number:

    NVMFS5C456NWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    507BE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    239 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    80 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C456NWFT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C456NWFT1G is -40°C to 125°C.
  • To ensure data integrity, it is recommended to use a capacitor or a battery-backed solution to maintain power to the device during power cycling or sudden power loss. Additionally, implement a robust power-on reset (POR) circuit to ensure a clean reset of the device.
  • The NVMFS5C456NWFT1G supports up to 100,000 erase cycles per sector, with a minimum of 10,000 erase cycles guaranteed.
  • During write or erase operations, the device will assert the 'busy' signal. The host should poll the 'busy' signal and wait for it to de-assert before issuing the next command. This ensures that the device has completed the previous operation and is ready to accept the next command.
  • The recommended method for detecting the end of a write or erase operation is to poll the 'busy' signal or use the 'ready/busy' (RB) pin, which is an open-drain output that indicates the device's busy status.

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