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NVMFS5C466NLWFT1G - onsemi

Description: Small Footprint (5 x 6 mm); Low RDS(on); Low Qg and Capacitance; Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS5C466NLWFT1G - onsemi PCB footprint - Other - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFS5C466NLWFT1G - onsemi  - 3D model - Other - DFNW5 5x6  FULL−CUT SO8FL WF) CASE 507BA ISSUE A
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NVMFS5C466NLWFT1G Details

  • Manufacturer Part Number:

    NVMFS5C466NLWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    37 W

  • Pulsed Drain Current-Max (IDM):

    238.6 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS5C466NLWFT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for the NVMFS5C466NLWFT1G can be found in the onsemi application note AND9005/D, which provides guidelines for PCB design, thermal management, and layout considerations to ensure optimal performance and reliability.
  • The NVMFS5C466NLWFT1G has built-in fault detection and protection mechanisms, such as over-temperature protection, over-voltage protection, and under-voltage lockout. However, additional external circuitry may be required to detect and respond to faults. onsemi recommends consulting the device datasheet and application notes for guidance on implementing fault detection and protection mechanisms.
  • The recommended operating conditions for the NVMFS5C466NLWFT1G are specified in the datasheet, including temperature range, voltage supply, and current limits. Operating the device outside of these conditions can impact performance, reliability, and lifespan. It is essential to ensure that the device is operated within the recommended conditions to guarantee optimal performance and reliability.
  • The NVMFS5C466NLWFT1G has built-in security features, such as secure erase and program lock. However, additional measures can be taken to ensure data integrity and security, such as implementing encryption, secure boot mechanisms, and access control. onsemi recommends consulting the device datasheet and application notes for guidance on ensuring data integrity and security.
  • The potential failure modes of the NVMFS5C466NLWFT1G include over-temperature, over-voltage, and physical damage. These failure modes can be mitigated by implementing proper thermal management, voltage regulation, and physical protection measures, such as conformal coating and encapsulation. onsemi recommends consulting the device datasheet and application notes for guidance on mitigating potential failure modes.

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NVMFS5C466NLWFT1G Overview

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Part Image NVMFS5C466NLT1G onsemi

Power Field-Effect Transistor, 52A I(D), 40V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET