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NVMFS5C638NLT1G - onsemi

Description: AEC−Q101 Qualified and PPAP Capable; RoHS Compliant; Low RDS(on); Low QG and Capacitance; Industry Standard Small Footprint 5 x 6 mm Package; NVMFS5C638NLWF − Wettable Flank Option

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NVMFS5C638NLT1G - onsemi PCB footprint - Other - Other - NVMFS6H864NT1G-2
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NVMFS5C638NLT1G - onsemi  - 3D model - Other - NVMFS6H864NT1G-2
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NVMFS5C638NLT1G Details

  • Manufacturer Part Number:

    NVMFS5C638NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    133 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    811 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS5C638NLT1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the component away from heat sources and ensure good airflow.
  • Use a thermal interface material (TIM) to improve heat transfer between the device and heat sink. Ensure the heat sink is properly attached and the system is designed to operate within the specified temperature range.
  • Use a metal shield or a conductive enclosure to minimize EMI and RFI. Ensure the device is properly grounded and decoupled from the PCB.
  • Follow the recommended power-up sequence in the datasheet. Ensure a slow voltage ramp-up (typically 10-20 ms) to prevent damage to the device.
  • Use a gentle cleaning process with a soft brush and a mild detergent. Avoid using harsh chemicals or abrasive materials that can damage the device or PCB.

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NVMFS5C638NLT1G Overview

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