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NVMFS5C645NLT1G - onsemi

Description: Low RDS(on); Low QG and Gate capacitance; Industry standard 5x6mm package Industry; NVMFS5C645NLWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS5C645NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M
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NVMFS5C645NLT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M
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NVMFS5C645NLT1G Details

  • Manufacturer Part Number:

    NVMFS5C645NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    185 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Pulsed Drain Current-Max (IDM):

    820 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C645NLT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C645NLT1G is -40°C to 125°C.
  • To ensure data integrity, it is recommended to use a capacitor or a battery-backed solution to maintain power to the device during power cycling or sudden power loss. Additionally, implement a robust power-on reset (POR) circuit to ensure the device is properly reset during power-up.
  • The NVMFS5C645NLT1G supports up to 100,000 write cycles per sector, with a total of 1,024 sectors available.
  • Page erase and program operations should be performed using the device's specific command set and protocols. Refer to the datasheet for detailed information on the command sequences and timing requirements.
  • The WP# (Write Protect) pin is used to prevent accidental writes to the device. When the WP# pin is low, the device is in write-protect mode, and any write operations will be ignored.

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