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NVMFS5C670NLAFT1G - onsemi

Description: NVMFS5C670NLWF − Wettable Flank Option; Low QG and Gate capacitance; Industry Standard Small Footprint 5x6mm Package; Low RDS(on); AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS5C670NLAFT1G Details

  • Manufacturer Part Number:

    NVMFS5C670NLAFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2017-02-24

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    166 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    71 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    61 W

  • Pulsed Drain Current-Max (IDM):

    440 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C670NLAFT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C670NLAFT1G is -40°C to 125°C.
  • To ensure data integrity and prevent data corruption during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The NVMFS5C670NLAFT1G supports up to 100,000 erase cycles.
  • No, NVMFS5C670NLAFT1G is not designed to operate in radiation-intensive environments. If you need a radiation-hardened device, you should consider a different part number.
  • Page erase and block erase operations should be performed using the specific commands and protocols outlined in the datasheet. It is recommended to use a dedicated flash memory controller or a microcontroller with built-in flash memory management capabilities to handle these operations.

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NVMFS5C670NLAFT1G Overview

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