Part Image

NVMFS5C670NLT1G - onsemi

Description: NVMFS5C670NLWF − Wettable Flank Option; Low QG and Gate capacitance; Industry Standard Small Footprint 5x6mm Package; Low RDS(on); AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

Download NVMFS5C670NLT1G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVMFS5C670NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
click to zoom
3D Models
NVMFS5C670NLT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
click to zoom

NVMFS5C670NLT1G Details

  • Manufacturer Part Number:

    NVMFS5C670NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SO-8FL / DFN-5

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    166 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    71 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    61 W

  • Pulsed Drain Current-Max (IDM):

    440 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C670NLT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C670NLT1G is -40°C to 125°C.
  • To ensure data integrity during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the flash memory.
  • The maximum number of erase cycles for NVMFS5C670NLT1G is 100,000 cycles.
  • No, NVMFS5C670NLT1G is not designed for use in radiation-intensive environments. If you need a radiation-hardened device, you should consider a different part number.
  • In the event of a page erase error, it is recommended to retry the erase operation up to a maximum of 3 times. If the error persists, the device should be replaced.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVMFS5C670NLT1G Overview

Use the download button to access the NVMFS5C670NLT1G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVMFS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVMFS5C670NLT1G

Showing 0 results

NVMFS5C670NLT1G Alternates

Showing results

Image Part Number Model
Part Image NVMFS5C670NLWFAFT1G onsemi

Power Field-Effect Transistor, 71A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C670NLWFAFT3G onsemi

Power Field-Effect Transistor, 71A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C670NLWFT1G onsemi

Power Field-Effect Transistor, 71A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C670NLT3G onsemi

Power Field-Effect Transistor, 71A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET