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NVMFS5C670NLWFAFT1G - onsemi

Description: NVMFS5C670NLWF − Wettable Flank Option; Low QG and Gate capacitance; Industry Standard Small Footprint 5x6mm Package; Low RDS(on); AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS5C670NLWFAFT1G - onsemi PCB footprint - Other - Other - DFN5_2022
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NVMFS5C670NLWFAFT1G Details

  • Manufacturer Part Number:

    NVMFS5C670NLWFAFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Manufacturer Package Code:

    507BE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2017-02-24

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    166 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    71 A

  • Drain-source On Resistance-Max:

    0.0088 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    61 W

  • Pulsed Drain Current-Max (IDM):

    440 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C670NLWFAFT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for NVMFS5C670NLWFAFT1G is -40°C to 125°C.
  • To ensure data integrity and prevent data corruption during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The NVMFS5C670NLWFAFT1G supports up to 100,000 erase cycles.
  • No, NVMFS5C670NLWFAFT1G is not designed to operate in radiation-intensive environments. It is recommended to use radiation-hardened devices in such environments.
  • Page erase and block erase operations should be handled according to the device's programming and erase specifications. It is recommended to use the device's programming and erase algorithms to ensure reliable operation.

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NVMFS5C670NLWFAFT1G Overview

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