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NVMFS5C677NLT1G - onsemi

Description: RoHS Compliant; AEC−Q101 Qualified and PPAP Capable; NVMFS5C677NLWF − Wettable Flank Option; Low RDS(on); Low QG and Gate capacitance; Industry standard 5 x 6 mm package Industry; Best in-class FOM (RDS(ON) x QG)

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NVMFS5C677NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_3
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NVMFS5C677NLT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N_3
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NVMFS5C677NLT1G Details

  • Manufacturer Part Number:

    NVMFS5C677NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-11-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.0215 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    37 W

  • Pulsed Drain Current-Max (IDM):

    166 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C677NLT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS5C677NLT1G is 2.7V to 3.6V.
  • To ensure data integrity, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The NVMFS5C677NLT1G supports up to 100,000 erase cycles.
  • Page erase and program operations should be performed using the recommended algorithms and timing specifications outlined in the datasheet to ensure reliable operation.
  • The recommended storage temperature range for NVMFS5C677NLT1G is -40°C to 125°C.

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NVMFS5C677NLT1G Overview

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Part Image NVMFS5C677NLWFT1G onsemi

Power Field-Effect Transistor, 36A I(D), 60V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET