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NVMFS5H663NLT1G - onsemi

Description: Small Footprint (5x6 mm) for Compact Design; Low RDS(on) to Minimize Conduction Losses; Low QG and Capacitance to Minimize Driver Losses; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMFS5H663NLT1G - onsemi PCB footprint - Other - Other - NVMFS6H864NT1G-2
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NVMFS5H663NLT1G - onsemi  - 3D model - Other - NVMFS6H864NT1G-2
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NVMFS5H663NLT1G Details

  • Manufacturer Part Number:

    NVMFS5H663NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    DFN5, 8 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2018-05-15

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    274 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    67 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7.5 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    63 W

  • Pulsed Drain Current-Max (IDM):

    359 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVMFS5H663NLT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the package can help to dissipate heat efficiently. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in the onsemi application note AND9393/D.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, including proper heat sinking, thermal interface material selection, and airflow management. Additionally, consider using a thermocouple or thermistor to monitor the device temperature and implement thermal protection mechanisms.
  • The POR timing can affect the system's power-up sequence and reset behavior. Ensure that your system design takes into account the POR timing specifications to avoid unexpected behavior or system crashes. Consult the datasheet and onsemi's application notes for more information.
  • The NVMFS5H663NLT1G has specific power sequencing requirements to ensure proper operation. Ensure that your power supply design meets these requirements, and consider using a power sequencing controller or a dedicated power management IC to simplify the design.
  • The NVMFS5H663NLT1G has built-in ESD protection, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. Ensure that your manufacturing and assembly processes include ESD protection measures, and consider adding external ESD protection devices if necessary.

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