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NVMFS6B03NLT1G - onsemi

Description: Obsolete - Single N-Channel Power MOSFET 100V, 145A, 4mΩ

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PCB Footprints
NVMFS6B03NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NVMFS6B03NLT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NVMFS6B03NLT1G Details

  • Manufacturer Part Number:

    NVMFS6B03NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    145 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    198 W

  • Pulsed Drain Current-Max (IDM):

    520 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6B03NLT1G Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal inductance and resistance in the power paths. Thermal management is crucial, and a heat sink or thermal pad is recommended to keep the junction temperature below 150°C. A 2-3 layer PCB with a solid ground plane and wide power traces is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal management guidelines, use a heat sink or thermal pad, and ensure good airflow. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The NVMFS6B03NLT1G has built-in ESD protection, but it's still essential to follow standard ESD handling precautions during assembly and testing. Use an ESD wrist strap, mat, or workstation, and ensure that all equipment is properly grounded. Avoid touching the device's pins or exposed die.
  • Yes, the NVMFS6B03NLT1G is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions, and ensure that the device is properly qualified and validated for the specific application. Consult with onsemi's application engineers for guidance on specific requirements.
  • Use a soldering iron with a temperature range of 250-260°C, and ensure that the soldering time is within 3-5 seconds. Avoid applying excessive force or pressure during assembly, and use a solder with a melting point above 217°C. Follow the recommended land pattern and soldering guidelines provided in the datasheet.

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NVMFS6B03NLT1G Overview

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Part Image NVMFS6B03NLWFT3G onsemi

Power Field-Effect Transistor, 145A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET