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NVMFS6B14NWFT1G - onsemi

Description: Obsolete - Single N-Channel Power MOSFET 100V, 55A, 15mΩ

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NVMFS6B14NWFT1G Details

  • Manufacturer Part Number:

    NVMFS6B14NWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    29 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6B14NWFT1G Frequently Asked Questions (FAQs)

  • Onsemi provides a reference design guide for PCB layout and thermal management in their application note AND9407/D. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
  • Onsemi recommends using external fault detection and protection circuits, such as over-voltage protection (OVP), under-voltage protection (UVP), and over-temperature protection (OTP). Additionally, implementing a watchdog timer and error detection mechanisms can help detect and respond to faults.
  • The input capacitor should be a low-ESR, high-frequency capacitor (e.g., X7R or X5R dielectric) with a value between 4.7 μF to 10 μF. The capacitor's quality and value significantly impact the device's performance, stability, and noise immunity. Onsemi recommends following their application note AND9407/D for more information.
  • To ensure EMC and reduce EMI, follow onsemi's guidelines for PCB layout, component placement, and shielding. Use a multi-layer PCB with a solid ground plane, and consider using EMI filters or common-mode chokes. Additionally, ensure that the device is properly decoupled and that the input and output traces are routed carefully.
  • The device's thermal derating is critical for reliability. Onsemi recommends derating the device's power dissipation by 1.5% per degree Celsius above 25°C. This ensures that the device operates within its safe operating area and minimizes the risk of thermal-related failures.

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NVMFS6B14NWFT1G Overview

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