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NVMFS6H801NLT1G - onsemi

Description: Small Footprint (5x6mm); Low RDS (on); Low QG and Capacitance; NVMFS6H801NLWF -Wettable Flank Option; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMFS6H801NLT1G Details

  • Manufacturer Part Number:

    NVMFS6H801NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    706 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    160 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H801NLT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for optimal performance can be found in the onsemi application note AND9005/D, which provides guidelines for thermal design and layout considerations. Additionally, it's recommended to follow the JEDEC standard for thermal interface material and thermal pad design.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal interface materials with high thermal conductivity, and ensure good airflow around the device. It's also recommended to perform thermal simulations and testing to validate the design.
  • The NVMFS6H801NLT1G has built-in ESD protection, but it's still essential to follow proper handling and storage precautions to prevent damage. Use an ESD wrist strap or mat, and handle the device by the body or pins, avoiding direct contact with the die. Store the device in an anti-static bag or container, and follow the recommended soldering and assembly procedures.
  • The NVMFS6H801NLT1G is not specifically designed or qualified for radiation-hardened or high-reliability applications. If you need a device for such an application, consider using a radiation-hardened or high-reliability version of the device, or consult with onsemi's sales team for guidance on suitable alternatives.
  • The recommended testing and validation procedures for the NVMFS6H801NLT1G can be found in the onsemi application note AND9004/D, which provides guidelines for device testing and validation. Additionally, consider performing environmental testing, such as temperature cycling and vibration testing, to ensure the device meets the required specifications.

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