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NVMFS6H824NT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFS6H824NWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS6H824NT1G Details

  • Manufacturer Part Number:

    NVMFS6H824NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2018-08-02

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    736 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    103 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    115 W

  • Pulsed Drain Current-Max (IDM):

    626 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H824NT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS6H824NT1G is 2.7V to 3.6V.
  • To ensure data integrity, it is recommended to follow the power-down and power-up sequence specified in the datasheet, and to use a voltage supervisor or a power-on reset circuit to ensure a clean power-up sequence.
  • The NVMFS6H824NT1G supports up to 100,000 erase cycles per sector, and up to 10,000 erase cycles per block.
  • Page and block locking can be handled using the LOCK and UNLOCK commands specified in the datasheet. It is recommended to follow the locking mechanism to prevent accidental writes or erases.
  • The recommended method is to use the Error Correction Code (ECC) and Cyclic Redundancy Check (CRC) features built into the NVMFS6H824NT1G. Additionally, implementing a retry mechanism and error handling routine in the firmware can help detect and handle errors during read and write operations.

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NVMFS6H824NT1G Overview

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