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NVMFS6H836NLT1G - onsemi

Description: N-Channel 80 V 16A (Ta), 77A (Tc) 3.7W (Ta), 89W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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NVMFS6H836NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P  (SO−8FL) CASE 488AA ISSUE N
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NVMFS6H836NLT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P  (SO−8FL) CASE 488AA ISSUE N
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NVMFS6H836NLT1G Details

  • Manufacturer Part Number:

    NVMFS6H836NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    653 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    77 A

  • Drain-source On Resistance-Max:

    0.0078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    89 W

  • Pulsed Drain Current-Max (IDM):

    449 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H836NLT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for optimal performance can be found in the onsemi application note AND9005/D, which provides guidelines for PCB design, thermal management, and layout considerations.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust thermal management system. Additionally, consider using a thermally enhanced package or a heat sink to reduce the junction temperature.
  • The NVMFS6H836NLT1G has built-in ESD protection, but it's still essential to follow proper handling and storage precautions to prevent damage. Use an ESD wrist strap, workbench, or mat, and avoid touching the device's pins or exposed die. Store the devices in anti-static packaging or bags.
  • The NVMFS6H836NLT1G is not specifically designed or qualified for radiation-hardened or high-reliability applications. For such applications, consider using devices that are specifically designed and qualified for those environments, such as those with QML or QPL certifications.
  • The recommended soldering and assembly techniques for the NVMFS6H836NLT1G can be found in the onsemi application note AND9004/D, which provides guidelines for soldering, assembly, and inspection.

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