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NVMFS6H836NWFT1G - onsemi

Description: Small Footprint (5x6 mm); Low RDS(on); Low QG and Capacitance; NVMFS6H836NWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVMFS6H836NWFT1G - onsemi PCB footprint - Other - Other - NTMFS002P03P8ZT1G-3
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NVMFS6H836NWFT1G - onsemi  - 3D model - Other - NTMFS002P03P8ZT1G-3
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NVMFS6H836NWFT1G Details

  • Manufacturer Part Number:

    NVMFS6H836NWFT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW5 4.90x5.90x1.00, 1.27P

  • Package Description:

    SO-8FL, DFNW5, 6 PIN

  • Manufacturer Package Code:

    507BA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Date Of Intro:

    2018-08-02

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    521 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    74 A

  • Drain-source On Resistance-Max:

    0.0067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    89 W

  • Pulsed Drain Current-Max (IDM):

    432 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H836NWFT1G Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for optimal performance can be found in the onsemi application note AND9005/D, which provides guidelines for PCB design, thermal management, and layout considerations.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust thermal management system. Additionally, consider using a heat sink or a thermally enhanced package.
  • The input capacitor selection is critical for the NVMFS6H836NWFT1G. A low-ESR ceramic capacitor with a minimum capacitance of 10uF and a voltage rating of 50V or higher is recommended. The capacitor should be placed as close as possible to the VIN pin to minimize inductance and ensure stable operation.
  • To troubleshoot and debug issues with the NVMFS6H836NWFT1G, use a combination of visual inspection, voltage measurements, and oscilloscope analysis. Check for proper power sequencing, voltage levels, and signal integrity. Consult the onsemi application notes and technical support resources for guidance on specific issues.
  • Different package types or variants of the NVMFS6H836NWFT1G may have distinct thermal, electrical, and mechanical characteristics. Be sure to consult the specific datasheet and application notes for the chosen package type or variant to ensure compatibility and optimal performance.

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