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NVMFS6H848NT1G - onsemi

Description: Power MOSFET 80 V, 64 A, 9.4 mΩ, Single N-Channel, SO8-FL

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NVMFS6H848NT1G Details

  • Manufacturer Part Number:

    NVMFS6H848NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-08-02

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    278 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    57 A

  • Drain-source On Resistance-Max:

    0.0094 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    73 W

  • Pulsed Drain Current-Max (IDM):

    308 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS6H848NT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS6H848NT1G is 2.7V to 3.6V, as specified in the datasheet. However, it's essential to note that the device can tolerate a voltage range of 2.5V to 4.5V for short durations, but prolonged operation outside the recommended range may affect its performance and reliability.
  • To ensure data integrity during power-down or power-up cycles, it's crucial to follow the recommended power-up and power-down sequences outlined in the datasheet. Additionally, consider implementing a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized and stabilized before accessing the memory.
  • The maximum operating frequency for NVMFS6H848NT1G is 104 MHz, as specified in the datasheet. However, it's essential to consider the system's clock frequency, bus speed, and other factors to ensure that the device operates within its specified frequency range.
  • In the event of errors during write or erase operations, the device will set the appropriate status flags. It's essential to implement error detection and correction mechanisms in your firmware or software to handle these errors and ensure data integrity. Refer to the datasheet for specific guidance on error handling and recovery procedures.
  • The typical programming time for NVMFS6H848NT1G varies depending on the operation being performed. For example, the typical page program time is around 1.5 ms, while the typical sector erase time is around 50 ms. Refer to the datasheet for specific timing characteristics and consider these factors when designing your system's firmware or software.

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NVMFS6H848NT1G Overview

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